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7 Th05 2015

Tiến sĩ [Học bổng du học Đức – PhD] (Semiconductor Nanoelectronics, Physics, Material Science)

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[Học bổng du học Đức – PhD]

Deadline: no deadline


PhD position on molecular-beam epitaxy of SiGe heterostructures for the development of quantum cascade emitters

Advertising institute: PGI-9 – Semiconductor Nanoelectronics

Reference number: D038/2015, Physics, material science

A Si-based laser has been a long-sought goal, as such device may be used for next-generation data transfer solutions and lab-on-a-chip systems. SiGe quantum cascades are a promising candidate for realizing such a laser. While intersubband electroluminescence based on heavy hole – heavy hole transitions have been realized [1], no lasing has been achieved yet due to insufficient upper state life times. In this project we focus on a different approach, based transitions between light hole states, which exhibit much longer lifetimes. In collaboration with the Johannes Kepler University (JKU) Linz, we have recently realized a SiGe quantum cascade structure employing a radiative transition between light-hole states, which exhibits superior characteristics compared to the heavy-hole-based approach [2].

[1] G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller, Intersubband electroluminescence from silicon-based quantum cascade structures, Science 290, 2277 (2000)
[2] P. Rauter, G. Mussler, D. Grützmacher, T. Fromherz, Light-hole based SiGe quantum cascade emitters, submitted to Nature Photonics, under review

Job description: 
We are looking for a Ph.D. student to carry out molecular-beam epitaxy (MBE) of SiGe heterostructures for the realization of quantum cascade emitters. In particular the candidate is expected to operate the MBE system to grow the sophisticated heterostructures and to carry out structural characterization on them, for example x-ray diffraction, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, etc. The candidate will be in close contact with our colleagues at JKU who will process and spectroscopically characterize the structures.

Your profile:
The candidate should have:

  • Master’s degree in physics or material science, preferably with a solid background in condensed matter physics
  • Experience in growth and characterization techniques of semiconductors will be an advantage.
  • Strong scientific communications and presentation skills
  • Well-structured and systematic research approach, experimental skills

What we offer:

  • Carrying out research on a cutting-edge topic
  • State-of-the-art SiGe-MBE system in a well-equipped research infrastructure
  • Strong interaction with other researcher within PGI and Johannes Kepler University Linz
  • Possibilities to attend national and international conferences

Forschungszentrum Jülich aims to employ more women in this area and therefore particularly welcomes applications from women. We also welcome applications from disabled persons.

We invite interested candidates to send applications including a CV, copies of exams, degrees and grades, a copy of your Master thesis (or a draft thereof), published articles or other relevant material such as letter(s) of recommendation to Dr. Gregor Mussler (email: g.mussler@fz-juelich.de)

Link gốc: http://www.fz-juelich.de/pgi/pgi-9

Link: http://www.fz-juelich.de/SharedDocs/Stellenangebote/_common/dipldok/d038-2015-pgi-9.html

Ngành Học: Khoa học cơ bản.

Danh mục học bổng: Học bổng du học Đức.

Bậc học: Tiến sĩ.


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